| Presentation | 2001/2/21 Fabrication of InGaAs Ridge Quantum Structures Grown by Selective MBE and their Device Applications T Muranaka, A Ito, C Jiang, H Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaAs quantum wires (QWRS)-and quantum dots (QDs)-based network structures were successfully formed by the selective molecular beam epitaxial (MBE) growth on the various kinds of patterned InP substrates. Efforts were made to characterize and optimize an oxide removal process for the InP surface using atomic hydrogen cleaning. Under the optimum low-temperature atomic hydrogen cleaning, surface stoichiometry could be maintained and realized on an atomically flat InGaAs/InP interface. This, combined with other efforts, has led to the formation of uniform InGaAs quantum structures with good optical properties. Magnetotransport measurements showed that the strong electron confinement of 13 meV was realized in QWR and the effective width of QWR could be controlled by Schottky wrap gate (WPG). New attempts were made to fabricate single eletron transistor (SET) using QWR-QD coupled structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Selective MBE / InP / Quantum wire / Quantum dot / Uniformity of structures / Electrical property |
| Paper # | ED2000-245,SDM2000-199 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of InGaAs Ridge Quantum Structures Grown by Selective MBE and their Device Applications |
| Sub Title (in English) | |
| Keyword(1) | Selective MBE |
| Keyword(2) | InP |
| Keyword(3) | Quantum wire |
| Keyword(4) | Quantum dot |
| Keyword(5) | Uniformity of structures |
| Keyword(6) | Electrical property |
| 1st Author's Name | T Muranaka |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering Hokkaido University() |
| 2nd Author's Name | A Ito |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering Hokkaido University |
| 3rd Author's Name | C Jiang |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering Hokkaido University |
| 4th Author's Name | H Hasegawa |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering Hokkaido University |
| Date | 2001/2/21 |
| Paper # | ED2000-245,SDM2000-199 |
| Volume (vol) | vol.100 |
| Number (no) | 641 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |