Presentation 2000/12/8
Field Emission Characteristics of Surface Treated GaN
Takamitsu Hori, Tomohide Yamamoto, Chiharu Kimura, Takashi Sugino,
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Abstract(in English) Si-doped GaN layers are grown on sapphire substrates with AlN buffer layers by metalorganic chemical vapor deposition method. GaN has a flat surface. GaN surface is roughened by treatment with H_2 plasma produced by supplying microwave power. The surface of GaN treated with H_2 plasma is observed with atomic force microscopy, and field emission characteristics are measured. Turn-on average electric field is estimated to be 12.4V/μm between the GaN surface and anode electrode.
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Keyword(in English) Si-doped GaN / H_2 plasma / field emission / F-N tunneling
Paper # ED2000-206
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Committee ED
Conference Date 2000/12/8(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Field Emission Characteristics of Surface Treated GaN
Sub Title (in English)
Keyword(1) Si-doped GaN
Keyword(2) H_2 plasma
Keyword(3) field emission
Keyword(4) F-N tunneling
1st Author's Name Takamitsu Hori
1st Author's Affiliation Osaka University()
2nd Author's Name Tomohide Yamamoto
2nd Author's Affiliation Osaka University
3rd Author's Name Chiharu Kimura
3rd Author's Affiliation Osaka University
4th Author's Name Takashi Sugino
4th Author's Affiliation Osaka University
Date 2000/12/8
Paper # ED2000-206
Volume (vol) vol.100
Number (no) 506
Page pp.pp.-
#Pages 6
Date of Issue