Presentation | 2000/12/8 Field Emission Characteristics of Surface Treated GaN Takamitsu Hori, Tomohide Yamamoto, Chiharu Kimura, Takashi Sugino, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Si-doped GaN layers are grown on sapphire substrates with AlN buffer layers by metalorganic chemical vapor deposition method. GaN has a flat surface. GaN surface is roughened by treatment with H_2 plasma produced by supplying microwave power. The surface of GaN treated with H_2 plasma is observed with atomic force microscopy, and field emission characteristics are measured. Turn-on average electric field is estimated to be 12.4V/μm between the GaN surface and anode electrode. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si-doped GaN / H_2 plasma / field emission / F-N tunneling |
Paper # | ED2000-206 |
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Committee | ED |
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Conference Date | 2000/12/8(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Field Emission Characteristics of Surface Treated GaN |
Sub Title (in English) | |
Keyword(1) | Si-doped GaN |
Keyword(2) | H_2 plasma |
Keyword(3) | field emission |
Keyword(4) | F-N tunneling |
1st Author's Name | Takamitsu Hori |
1st Author's Affiliation | Osaka University() |
2nd Author's Name | Tomohide Yamamoto |
2nd Author's Affiliation | Osaka University |
3rd Author's Name | Chiharu Kimura |
3rd Author's Affiliation | Osaka University |
4th Author's Name | Takashi Sugino |
4th Author's Affiliation | Osaka University |
Date | 2000/12/8 |
Paper # | ED2000-206 |
Volume (vol) | vol.100 |
Number (no) | 506 |
Page | pp.pp.- |
#Pages | 6 |
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