| Presentation | 2000/10/13 InN/Si heterojunction fabricated by RF-MBE and its band offset Takashi Yamashita, Kouji Suzuki, Takao Nakano, Masahiro Yoshimoto, Junji Saraie, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InN was grown on Si at 500℃ by molecular beam epitaxy (MBE) using In metal and activated nitrogen species generated in rf plasma. The grown layer showed a flat surface and n^+-type conduction with an electron concentration of 3×10^<20>cm^<-3> and a Hall mobility of 28cm^2/Vs. The band offset of InN/Si heterojunction was determined using X-ray photoemission spectroscopy. The top of the valence band of InN was evaluated to be located at 1.60eV lower than that of Si. This implies that the InN/Si heterojunction is a promising system to realize a barrier against holes in Si devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InN / Si / heterojunction / X-ray photoemission spectroscopy / band offset / MBE |
| Paper # | ED2000-174,CPM2000-113 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InN/Si heterojunction fabricated by RF-MBE and its band offset |
| Sub Title (in English) | |
| Keyword(1) | InN |
| Keyword(2) | Si |
| Keyword(3) | heterojunction |
| Keyword(4) | X-ray photoemission spectroscopy |
| Keyword(5) | band offset |
| Keyword(6) | MBE |
| 1st Author's Name | Takashi Yamashita |
| 1st Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology() |
| 2nd Author's Name | Kouji Suzuki |
| 2nd Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
| 3rd Author's Name | Takao Nakano |
| 3rd Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
| 4th Author's Name | Masahiro Yoshimoto |
| 4th Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
| 5th Author's Name | Junji Saraie |
| 5th Author's Affiliation | Department of Electronics and Information Science Kyoto Institute of Technology |
| Date | 2000/10/13 |
| Paper # | ED2000-174,CPM2000-113 |
| Volume (vol) | vol.100 |
| Number (no) | 370 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |