Presentation | 2000/10/12 Characterization of GaN crystal quality by using sub - micrometer Schottky contacts : correlation between I-V characteristics and dislocations Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We directly evaluated the effect of dislocations on I-V characteristics of Au/Ni/n-GaN Schottky contacts. A sub-micrometer Schottky dot array was formed by electron beam lithography and I-V measurements were conducted using AFM with a conductive probe. Neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / dislocation / Schottky contact / I-V characteristics / AFM / sub-micrometer dot |
Paper # | ED2000-165,CPM2000-104 |
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Committee | ED |
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Conference Date | 2000/10/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of GaN crystal quality by using sub - micrometer Schottky contacts : correlation between I-V characteristics and dislocations |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | dislocation |
Keyword(3) | Schottky contact |
Keyword(4) | I-V characteristics |
Keyword(5) | AFM |
Keyword(6) | sub-micrometer dot |
1st Author's Name | Kenji Shiojima |
1st Author's Affiliation | NTT Photonics Laboratories() |
2nd Author's Name | Tetsuya Suemitsu |
2nd Author's Affiliation | NTT Photonics Laboratories |
3rd Author's Name | Mitsumasa Ogura |
3rd Author's Affiliation | Kyoto University |
Date | 2000/10/12 |
Paper # | ED2000-165,CPM2000-104 |
Volume (vol) | vol.100 |
Number (no) | 369 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |