Presentation 2000/10/12
Characterization of GaN crystal quality by using sub - micrometer Schottky contacts : correlation between I-V characteristics and dislocations
Kenji Shiojima, Tetsuya Suemitsu, Mitsumasa Ogura,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We directly evaluated the effect of dislocations on I-V characteristics of Au/Ni/n-GaN Schottky contacts. A sub-micrometer Schottky dot array was formed by electron beam lithography and I-V measurements were conducted using AFM with a conductive probe. Neither dislocations nor steps affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / dislocation / Schottky contact / I-V characteristics / AFM / sub-micrometer dot
Paper # ED2000-165,CPM2000-104
Date of Issue

Conference Information
Committee ED
Conference Date 2000/10/12(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of GaN crystal quality by using sub - micrometer Schottky contacts : correlation between I-V characteristics and dislocations
Sub Title (in English)
Keyword(1) GaN
Keyword(2) dislocation
Keyword(3) Schottky contact
Keyword(4) I-V characteristics
Keyword(5) AFM
Keyword(6) sub-micrometer dot
1st Author's Name Kenji Shiojima
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name Tetsuya Suemitsu
2nd Author's Affiliation NTT Photonics Laboratories
3rd Author's Name Mitsumasa Ogura
3rd Author's Affiliation Kyoto University
Date 2000/10/12
Paper # ED2000-165,CPM2000-104
Volume (vol) vol.100
Number (no) 369
Page pp.pp.-
#Pages 6
Date of Issue