| Presentation | 2000/5/11 Deep level characterization for 3C-SiC/Si treated by a hydrogen plasma F. Sobue, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, N. Yamada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We attempted to passivate deep levels in 3C-SiC / Si by a hydrogen plasma treatment. Result of DLTS measurements, we show that deep levels exsting in the as-grown sample were passivated by the hydrogen plasma treatment. However we found new deep levels formed by damage of plasma treatment. The damage was eliminated by the annealing at 400゜C. After annealing at 500゜C the deep levels found in as-grown sample were reactivated because of the out diffusion of hydrogen during the annealing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3C-SiC / plasma / hydrogen / deep level / DLTS measurement / anneal |
| Paper # | ED2000-28, CPM2000-13, SDM2000-28 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deep level characterization for 3C-SiC/Si treated by a hydrogen plasma |
| Sub Title (in English) | |
| Keyword(1) | 3C-SiC |
| Keyword(2) | plasma |
| Keyword(3) | hydrogen |
| Keyword(4) | deep level |
| Keyword(5) | DLTS measurement |
| Keyword(6) | anneal |
| 1st Author's Name | F. Sobue |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | M. Kato |
| 2nd Author's Affiliation | Nagoya Institute of Technology |
| 3rd Author's Name | M. Ichimura |
| 3rd Author's Affiliation | Nagoya Institute of Technology |
| 4th Author's Name | E. Arai |
| 4th Author's Affiliation | Nagoya Institute of Technology |
| 5th Author's Name | Y. Tokuda |
| 5th Author's Affiliation | Aichi Institute of Technology |
| 6th Author's Name | N. Yamada |
| 6th Author's Affiliation | Toyota Central Research and Development Laboratory |
| Date | 2000/5/11 |
| Paper # | ED2000-28, CPM2000-13, SDM2000-28 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |