Presentation 2000/5/11
Silicon Carbide Power MOSFETs
Rajesh Kumar Malhan,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The ability to thermally oxidize wide bandgap semiconductor silicon carbide(SiC)has led to the development of innovative MOS based low-loss high power devices. These ideal switches will revolutionize the fundamental inverter technology of motor drive and HVDC transmission systems. This paper provides an overview of recent advances in SiC-MOSFET design and device processing technologies. Accumulation-mode SiC-MOSFETs have demonstrated the potentials for the high power switching applications. The challenges for power device development beginning from SiC crystal quality to key device processing viz., thermal oxidation and ion-implantation are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Silicon carbide / MOSFET / Accumulation-mode / JFET effect / Thermal oxide / Ion-implantation
Paper # ED2000-25, CPM2000-10, SDM2000-25
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Committee ED
Conference Date 2000/5/11(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Silicon Carbide Power MOSFETs
Sub Title (in English)
Keyword(1) Silicon carbide
Keyword(2) MOSFET
Keyword(3) Accumulation-mode
Keyword(4) JFET effect
Keyword(5) Thermal oxide
Keyword(6) Ion-implantation
1st Author's Name Rajesh Kumar Malhan
1st Author's Affiliation Research Laboratories, DENSO CORPORATION()
Date 2000/5/11
Paper # ED2000-25, CPM2000-10, SDM2000-25
Volume (vol) vol.100
Number (no) 57
Page pp.pp.-
#Pages 8
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