Presentation | 2000/5/11 Silicon Carbide Power MOSFETs Rajesh Kumar Malhan, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The ability to thermally oxidize wide bandgap semiconductor silicon carbide(SiC)has led to the development of innovative MOS based low-loss high power devices. These ideal switches will revolutionize the fundamental inverter technology of motor drive and HVDC transmission systems. This paper provides an overview of recent advances in SiC-MOSFET design and device processing technologies. Accumulation-mode SiC-MOSFETs have demonstrated the potentials for the high power switching applications. The challenges for power device development beginning from SiC crystal quality to key device processing viz., thermal oxidation and ion-implantation are discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Silicon carbide / MOSFET / Accumulation-mode / JFET effect / Thermal oxide / Ion-implantation |
Paper # | ED2000-25, CPM2000-10, SDM2000-25 |
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Conference Information | |
Committee | ED |
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Conference Date | 2000/5/11(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Silicon Carbide Power MOSFETs |
Sub Title (in English) | |
Keyword(1) | Silicon carbide |
Keyword(2) | MOSFET |
Keyword(3) | Accumulation-mode |
Keyword(4) | JFET effect |
Keyword(5) | Thermal oxide |
Keyword(6) | Ion-implantation |
1st Author's Name | Rajesh Kumar Malhan |
1st Author's Affiliation | Research Laboratories, DENSO CORPORATION() |
Date | 2000/5/11 |
Paper # | ED2000-25, CPM2000-10, SDM2000-25 |
Volume (vol) | vol.100 |
Number (no) | 57 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |