| Presentation | 2000/5/11 GaN shottky diode characterization and recovering with etching damage by RIE Masaharu Nakaji, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Dry etching technique is generally used for the etching of group III-Nitride semiconductors. We have used RIE, which is one of the dry etching technology, on n-GaN and studied its influence. PL spectrum is used to study creation of damage. Upon etching, the band-edge intensity is decrease and band-edge-to-yellow intensity ratio is increase. The XPS peaks reveal presence of the discharge-gas-related residues in the surface of the film. Schottky diodes on RIE etched samples showed poor diode characteristics due to RIE damage. The annealing after N_2 plasma cleaning is found to be useful for recovering RIE damage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dry etching / RIE / GaN / PL / XPS / shottky diode / N_2 plasma |
| Paper # | ED2000-24, CPM2000-9, SDM2000-24 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN shottky diode characterization and recovering with etching damage by RIE |
| Sub Title (in English) | |
| Keyword(1) | dry etching |
| Keyword(2) | RIE |
| Keyword(3) | GaN |
| Keyword(4) | PL |
| Keyword(5) | XPS |
| Keyword(6) | shottky diode |
| Keyword(7) | N_2 plasma |
| 1st Author's Name | Masaharu Nakaji |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu Ishikawa |
| 2nd Author's Affiliation | Researh Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Researh Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 4th Author's Name | Takashi Jimbo |
| 4th Author's Affiliation | Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology |
| 5th Author's Name | Masayoshi Umeno |
| 5th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology : Researh Center for Micro-Structure Devices, Nagoya Institute of Technology |
| Date | 2000/5/11 |
| Paper # | ED2000-24, CPM2000-9, SDM2000-24 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |