| Presentation | 2000/5/11 Fabrication and Characterization of GaN with buried WN_x contact by ELO Masahiro Haino, Motoo Yamaguchi, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasusi Iyechika, Takayoshi Maeda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Characterization of W / n-GaN contacts and fabrication of GaN buried with WN_x mask by ELO are carried out. W / n-GaN contacts show good Schottky with increasing evaporation temperature. Annealing of the W / n-GaN contacts were performed. After annealing in H_2, W was decomposed and GaN surface roughened. After annealing in N_2+H_2, W had domain structure like a puzzle and GaN whiskers were observed on the surface. After annealing in NH_3+H_2, W was changed into WN_x. WN_x / n-GaN kept Schottky type. In ELO GaN using WN_x mask, the decomposition of GaN by catalytic effect was restrained, and WN_x buried structure was obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | WN_x / ELO / evaporation temperature / thermal annealing / catalytic effect / Shottky |
| Paper # | ED2000-23, CPM2000-8, SDM2000-23 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of GaN with buried WN_x contact by ELO |
| Sub Title (in English) | |
| Keyword(1) | WN_x |
| Keyword(2) | ELO |
| Keyword(3) | evaporation temperature |
| Keyword(4) | thermal annealing |
| Keyword(5) | catalytic effect |
| Keyword(6) | Shottky |
| 1st Author's Name | Masahiro Haino |
| 1st Author's Affiliation | Dept.of Electrical and Electronic Engineering, Mie Univ.() |
| 2nd Author's Name | Motoo Yamaguchi |
| 2nd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Mie Univ. |
| 3rd Author's Name | Atsushi Motogaito |
| 3rd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Mie Univ. |
| 4th Author's Name | Hideto Miyake |
| 4th Author's Affiliation | Dept.of Electrical and Electronic Engineering, Mie Univ. |
| 5th Author's Name | Kazumasa Hiramatsu |
| 5th Author's Affiliation | Dept.of Electrical and Electronic Engineering, Mie Univ. |
| 6th Author's Name | Nobuhiko Sawaki |
| 6th Author's Affiliation | Dept.of Electronic Engineering, Nagoya Univ. |
| 7th Author's Name | Yasusi Iyechika |
| 7th Author's Affiliation | Tukuba Research Laboratory, Sumitomo Chem.Co., Ltd |
| 8th Author's Name | Takayoshi Maeda |
| 8th Author's Affiliation | Tukuba Research Laboratory, Sumitomo Chem.Co., Ltd |
| Date | 2000/5/11 |
| Paper # | ED2000-23, CPM2000-8, SDM2000-23 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |