Presentation 2000/5/11
Growth experiments of GaN crystals from wetting solution
Akira Tanaka, Toshiya Murakami, Hironobu Katsuno,
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Abstract(in English) In order to develop a solution growth technique of GaN crystals, we applied the principle of traveling solvent method to wetting solution layer formed on a substrate. To make the wetting solution, a nitrided sapphire substrate was immersed into Ga melt on its below half surface and rotated at 1 rpm. NH_3 gas diluted with N_2 was passed on the Ga melt at 900゜C for 6 hours with keeping the substrate rotation. As the result, many small crystals appeared on the substrate. X-ray measurements revealed that all crystals had C-axis orientation aligned with that of the substrate. Increasing the temperature gradient in the growth region, the crystals grew up in their size and in their number. Thus, the solution growth of GaN can be said to be in a promising state.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / solution growth / wetting solution / traveling solvent method
Paper # ED2000-21, CPM2000-6, SDM2000-21
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Committee ED
Conference Date 2000/5/11(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth experiments of GaN crystals from wetting solution
Sub Title (in English)
Keyword(1) GaN
Keyword(2) solution growth
Keyword(3) wetting solution
Keyword(4) traveling solvent method
1st Author's Name Akira Tanaka
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Toshiya Murakami
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Hironobu Katsuno
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2000/5/11
Paper # ED2000-21, CPM2000-6, SDM2000-21
Volume (vol) vol.100
Number (no) 57
Page pp.pp.-
#Pages 6
Date of Issue