| Presentation | 2000/5/11 GaN growth on sapphire substrtates using Al buffer layer K. Tanaka, K. Kuwahara, K. Ohtuka, M. Sumiya, Y. Takano, S. Fuke, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-temperature buffer layers have been usually used for the growth of GaN on sapphire substrates by MOVPE. In this paper, GaN layers were grown using AlN/Al or Al buffer layers deposited at high-temperature, and surface morphology, crystallinity and residual strain of grown GaN layers were investigated. The mirror-like GaN layers with(0001)Ga plane were obtained, though crystallinty of GaN layers became worse slightly. It was indicated that GaN layer grew from the opening of Al dot-like structure and that high-temperature direct growth of GaN was expected by reducing the thickness of Al layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOVPE / sapphire substrates / Al buffer layer / crystallinity |
| Paper # | ED2000-20, CPM2000-5, SDM2000-20 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN growth on sapphire substrtates using Al buffer layer |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOVPE |
| Keyword(3) | sapphire substrates |
| Keyword(4) | Al buffer layer |
| Keyword(5) | crystallinity |
| 1st Author's Name | K. Tanaka |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | K. Kuwahara |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 3rd Author's Name | K. Ohtuka |
| 3rd Author's Affiliation | Research and Development Division, Sanken Electric Co., Ltd. |
| 4th Author's Name | M. Sumiya |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 5th Author's Name | Y. Takano |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 6th Author's Name | S. Fuke |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| Date | 2000/5/11 |
| Paper # | ED2000-20, CPM2000-5, SDM2000-20 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |