| Presentation | 2000/5/11 Stress relief in Al_xGa_<1-x>N/GaN heterostructure measured by in-situ stress monitoring Shinji Terao, Motoaki Iwaya, Ryo Nakamura, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we report on the mechanism of crack generation in Al_xGa_<1-x>N / GaN heterostructure as observed by multi-beam optical stress sensor system. Tensile stress during growth of Al_xGa_<1-x>N on GaN is found to be simply explained by the coherent growth, while increase of tensile stress during growth with increase of Si concentration at a constant AlN molar fraction is quite new and can be explained by the impurity hardening effect. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN molar fraction / Si concentration / critical thickness / MOSS / stress / in-situ measurement |
| Paper # | ED2000-18, CPM2000-3, SDM2000-18 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress relief in Al_xGa_<1-x>N/GaN heterostructure measured by in-situ stress monitoring |
| Sub Title (in English) | |
| Keyword(1) | AlN molar fraction |
| Keyword(2) | Si concentration |
| Keyword(3) | critical thickness |
| Keyword(4) | MOSS |
| Keyword(5) | stress |
| Keyword(6) | in-situ measurement |
| 1st Author's Name | Shinji Terao |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Meijo University() |
| 2nd Author's Name | Motoaki Iwaya |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Meijo University |
| 3rd Author's Name | Ryo Nakamura |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Meijo University |
| 4th Author's Name | Satoshi Kamiyama |
| 4th Author's Affiliation | High Tech Research Center, Meijo University |
| 5th Author's Name | Hiroshi Amano |
| 5th Author's Affiliation | Department of Materials Science and Technology, Meijo University : High Tech Research Center, Meijo University |
| 6th Author's Name | Isamu Akasaki |
| 6th Author's Affiliation | Department of Materials Science and Technology, Meijo University : High Tech Research Center, Meijo University |
| Date | 2000/5/11 |
| Paper # | ED2000-18, CPM2000-3, SDM2000-18 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |