| Presentation | 2000/5/11 Photoluminescence properties of Eu implanted GaN Yasuo Nakanishi, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Eu is implanted into GaN epitaxial layer. The Eu-implanted GaN films are annealed in NH_3 diluted with N_2 at the temperature range of 950-1100゜C to remove the implantation damage. Photoluminescence(PL)properties are measured in the temperature range of 80-280K by using He-Cd laser as an excitation source. Strong emisssion at 621 nm, corresponding to the transition from ^5D_0 to ^7F_2 states of Eu^<3+> is observed and the thermal quenching properties of the PL is investigated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Eu doped GaN / Ion implantation / Photoluminescence |
| Paper # | ED2000-16, CPM2000-1, SDM2000-16 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence properties of Eu implanted GaN |
| Sub Title (in English) | |
| Keyword(1) | Eu doped GaN |
| Keyword(2) | Ion implantation |
| Keyword(3) | Photoluminescence |
| 1st Author's Name | Yasuo Nakanishi |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Akihiro Wakahara |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Akira Yoshida |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Takeshi Ohshima |
| 4th Author's Affiliation | Japan Atomic Energy Research Institute |
| 5th Author's Name | Hisayoshi Itoh |
| 5th Author's Affiliation | Japan Atomic Energy Research Institute |
| Date | 2000/5/11 |
| Paper # | ED2000-16, CPM2000-1, SDM2000-16 |
| Volume (vol) | vol.100 |
| Number (no) | 57 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |