Presentation 2000/7/21
A study of a evaluation method of band discontinuity by resonant tunnel diodes
Susumu Ohki, Michihiko Suhara, Tugunori Okumura,
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Abstract(in English) We study a method for evaluating band-offset by analyzing temperature dependence of current-voltage characteristics in tripple-barrier resonant tunneling diodes(TBRTD) based on thermionic emission theory. According to a numerical simulation was found that the conduction band offset could be evaluated within a 10% error for GaInP/GaAs TBRTD measured at a temperature range of 200K-300K
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Keyword(in English) Hetero-interface / Band discontinuity / Tripple barrier resonant tunnel diodes / Thermionic emission / GaInP/GaAs
Paper # ED2000-109
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Committee ED
Conference Date 2000/7/21(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A study of a evaluation method of band discontinuity by resonant tunnel diodes
Sub Title (in English)
Keyword(1) Hetero-interface
Keyword(2) Band discontinuity
Keyword(3) Tripple barrier resonant tunnel diodes
Keyword(4) Thermionic emission
Keyword(5) GaInP/GaAs
1st Author's Name Susumu Ohki
1st Author's Affiliation Graduate School of Engineering. Tokyo Metropolitan University()
2nd Author's Name Michihiko Suhara
2nd Author's Affiliation Graduate School of Engineering. Tokyo Metropolitan University
3rd Author's Name Tugunori Okumura
3rd Author's Affiliation Graduate School of Engineering. Tokyo Metropolitan University
Date 2000/7/21
Paper # ED2000-109
Volume (vol) vol.100
Number (no) 236
Page pp.pp.-
#Pages 6
Date of Issue