| Presentation | 2000/7/21 Evaluation of Phase Coherent Length using Double-Barrier Resonant Tunneling Diodes M. Nagase, K. Furuya, N. Machida, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We analyzed current-voltage(I-V) characteristics of double-barrier resonant tunneling diodes(DBRTD) taking into account the phase breaking effect and the structural inhomogeneity by using the correlation function theory to fit the experimental data over four orders of magnitude. The phase breaking effect appears in the region of the current less than one-hundredth of the peak in I-V characteristics in addition to the peak of the second derivative curve. To the latter, the well width fluctuation, if any, influences while not to the former. Using the theory, the phase coherent length and the well width fluctuation are estimated separately. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | phase coherence / correlation function / resonant properties / tunneling diodes |
| Paper # | ED2000-108 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Phase Coherent Length using Double-Barrier Resonant Tunneling Diodes |
| Sub Title (in English) | |
| Keyword(1) | phase coherence |
| Keyword(2) | correlation function |
| Keyword(3) | resonant properties |
| Keyword(4) | tunneling diodes |
| 1st Author's Name | M. Nagase |
| 1st Author's Affiliation | Department of Electronics Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | K. Furuya |
| 2nd Author's Affiliation | Department of Electronics Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | N. Machida |
| 3rd Author's Affiliation | Department of Electronics Engineering, Tokyo Institute of Technology |
| Date | 2000/7/21 |
| Paper # | ED2000-108 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |