| Presentation | 2000/7/21 Fowler-Nordheim current injection and stress-Induced leakage current characteristics of Si oxynitride grown in magnetically excited plasma Nobuo Imaoka, Hideaki Ikoma, |
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| PDF Download Page | PDF download Page Link | ||
| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | The Si oxynitride was grown by direct oxynitridation of the p-type Si(100)substrate in magnetically excited plasma Then the V^ | shift and it's frequency dependence caused by Fowler-Nordheim tunneling current injection, and the stress-induced leakage current(SILC)characteristics were measured. The behavior of the V^ | shift could be well explained by the surface plasmon, avalanche breakdown models and the effect of the total amount of injected carriers. The SILC characteristics showed the four-stage-breakdown(including the occurrences of A-and B-type SILCs), even in not so thin Si oxynitride film, which was usually observed in the ultra thin SiO_2. |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | Si / magneticaly-excited plasma / oxynitridation / F-N current stress / SILC / forming gas | ||
| Paper # | ED2000-107 | ||
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fowler-Nordheim current injection and stress-Induced leakage current characteristics of Si oxynitride grown in magnetically excited plasma |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | magneticaly-excited plasma |
| Keyword(3) | oxynitridation |
| Keyword(4) | F-N current stress |
| Keyword(5) | SILC |
| Keyword(6) | forming gas |
| 1st Author's Name | Nobuo Imaoka |
| 1st Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo() |
| 2nd Author's Name | Hideaki Ikoma |
| 2nd Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo |
| Date | 2000/7/21 |
| Paper # | ED2000-107 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |