Presentation 2000/7/21
Noncontact evaluation of surface and interface of SOI wafers
K. Eguchi, A. En, M. Suhara, T. Okumura,
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Abstract(in English) Although the electrical characterization of the top Si layer of the silicon-on-insulator(SOI) structure is very important, the conventional techniques such as DLTS require the electrode formation process. In this paper, we show the Kelvin method combining with the surface-photovoltage(SPV) measurements is capable of determining electrical properties of the surface as well as the near-surface region of the SOI without any device preparation process and completely in a nondestructive way. The measured contact potential difference is very sensitive to the surface condition; the atomic smoothness of the surface becomese, the heigher CPD is measured. Using a metal-coated optical fiber as a probe, we have tried to improve in the spatial resolution.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI wafers / Kelvin method / surface-photovoltage / Contact Potential Difference / atomic smoothness / optical fiber probe
Paper # ED2000-106
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Committee ED
Conference Date 2000/7/21(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Noncontact evaluation of surface and interface of SOI wafers
Sub Title (in English)
Keyword(1) SOI wafers
Keyword(2) Kelvin method
Keyword(3) surface-photovoltage
Keyword(4) Contact Potential Difference
Keyword(5) atomic smoothness
Keyword(6) optical fiber probe
1st Author's Name K. Eguchi
1st Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University()
2nd Author's Name A. En
2nd Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University
3rd Author's Name M. Suhara
3rd Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University
4th Author's Name T. Okumura
4th Author's Affiliation Department of Electrical Engineering, Tokyo Metropolitan University
Date 2000/7/21
Paper # ED2000-106
Volume (vol) vol.100
Number (no) 236
Page pp.pp.-
#Pages 6
Date of Issue