| Presentation | 2000/7/21 Electrical properties and interfacial reaction in Cu/n-InP contact Mayumi B. TAKEYAMA, Junichi ITAI, Atsushi NOYA, Tamotsu HASHIZUME, Seiya KASAI, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The relationship between the electrical property and the interfacial reaction in the Cu/n-InP contact has been studied. Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS) analyses showed the existence of distinct phases at the Cu/InP interface in the as-deposited specimen, due to the nonuniform interfacial reaction. The nonuniform reaction at the interface results in the existence of multi barrier heights in the I-V characteristic of the Cu/InP contact. It is revealed that the formation of the uniform interlayer at the electrode/InP interface is crucial to obtain the excellent electrical property of the contact. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal-semiconductor interface / InP / electrical property / interfacial reaction / barrier height |
| Paper # | ED2000-104 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties and interfacial reaction in Cu/n-InP contact |
| Sub Title (in English) | |
| Keyword(1) | metal-semiconductor interface |
| Keyword(2) | InP |
| Keyword(3) | electrical property |
| Keyword(4) | interfacial reaction |
| Keyword(5) | barrier height |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Junichi ITAI |
| 2nd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 5th Author's Name | Seiya KASAI |
| 5th Author's Affiliation | Graduate School Electronics and Information Engineering, Hokkaido University |
| 6th Author's Name | Hideki HASEGAWA |
| 6th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 2000/7/21 |
| Paper # | ED2000-104 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |