| Presentation | 2000/7/21 Formation of ohmic contact in Cu-Zr/n-InP system by rapid thermal annealing Mayumi B. TAKEYAMA, Junichi ITAI, Atsushi NOYA, Tamotsu HASHIZUME, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electrical property as well as the interfacial reaction and/or diffusion have been investigated in the Cu-Zr/InP contact to realize the thermally-stable ohmic contact to n-type InP. The application of the Cu-Zr amorphous alloy brings about the formation of the uniform interlayer at the Cu-Zr/InP interface suppressing the Cu diffusion into the InP substrate after rapid thermal annealing(RTA), resulting in the realization of the low contact resistivity at this interface upon RTA at 500℃ for 20s. It is revealed that the Cu-Zr amorphous alloy is one of the excellent materials applicable as an ohmic contact to n-type InP. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal-semiconductor interface / InP / ohmic contact / interfacial reaction / amorphous alloy |
| Paper # | ED2000-103 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of ohmic contact in Cu-Zr/n-InP system by rapid thermal annealing |
| Sub Title (in English) | |
| Keyword(1) | metal-semiconductor interface |
| Keyword(2) | InP |
| Keyword(3) | ohmic contact |
| Keyword(4) | interfacial reaction |
| Keyword(5) | amorphous alloy |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Junichi ITAI |
| 2nd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Dept.of Electrical and Electronic Engineering, Kitami Institute of Technology |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 5th Author's Name | Hideki HASEGAWA |
| 5th Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 2000/7/21 |
| Paper # | ED2000-103 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |