| Presentation | 2000/7/21 The passivation effects of V coulumn elements(Bi, Sb)on InP Shinya Morikita, Hideaki Ikoma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The passivation effects of V column elements(Bi, Sb)on InP were investigated. The reverse leakage current of the Schottky diode was very low and barrier height was rather high when the thicknesses of the Bi and Sb layers were appropriate(4-6nm), suggesting the robust passivation effects of these layers on InP. As these Bi-and Sb-passivated InP substrates were oxidized in the magnetically-excited plasma, very uniform Bi_2O_3/InP and Sb_2O_3/InP structures were obtained. The capacitance-voltage characteristics were relatively good for these structures. The effect of the forming gas annealing will be discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | magnetically excited / InP / Sb / Bi / passivation / barrier height |
| Paper # | ED2000-101 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The passivation effects of V coulumn elements(Bi, Sb)on InP |
| Sub Title (in English) | |
| Keyword(1) | magnetically excited |
| Keyword(2) | InP |
| Keyword(3) | Sb |
| Keyword(4) | Bi |
| Keyword(5) | passivation |
| Keyword(6) | barrier height |
| 1st Author's Name | Shinya Morikita |
| 1st Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo() |
| 2nd Author's Name | Hideaki Ikoma |
| 2nd Author's Affiliation | Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo |
| Date | 2000/7/21 |
| Paper # | ED2000-101 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |