| Presentation | 2000/7/21 Characterization of Plasma-induced Defects in InP T. Honda, M. Suhara, T. Okumura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Plasma-induced damage in the sub-surface region of p-InP has been characterized by the C-V technique. The defects consist of two species, one of which can be frozen in the near-surface region upon quenching the sample at 77K for 2 days. The other defect that migrates even after quenching could be atomic hydrogen. The reverse bias anneal(RBA) experiments showed the characteristic migration behavior of these defects. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP / plasma-induced damage / defect migration / reverse-bias anneal |
| Paper # | ED2000-100 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/7/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Plasma-induced Defects in InP |
| Sub Title (in English) | |
| Keyword(1) | InP |
| Keyword(2) | plasma-induced damage |
| Keyword(3) | defect migration |
| Keyword(4) | reverse-bias anneal |
| 1st Author's Name | T. Honda |
| 1st Author's Affiliation | Graduate School of Engineering, Tokyo Metropolitan University() |
| 2nd Author's Name | M. Suhara |
| 2nd Author's Affiliation | Graduate School of Engineering, Tokyo Metropolitan University |
| 3rd Author's Name | T. Okumura |
| 3rd Author's Affiliation | Graduate School of Engineering, Tokyo Metropolitan University |
| Date | 2000/7/21 |
| Paper # | ED2000-100 |
| Volume (vol) | vol.100 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |