| Presentation | 2000/6/23 ED2000-91 / SDM2000-91 Ultra shallow Boron diffusion in SIMOX and UNIBOND Structures Hideo Uchida, Masaya Ichimura, Eisuke Arai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Boron diffusion profiles in three kinds of silicon-on-insulator (SOI) structures with a very thin active layer were compared with those in bulk silicon. SOI structures used were low-dose SIMOX (separation by implanted oxygen) with ITOX (internal thermal oxidation), low-dose SIMOX without ITOX and UNIBOND. Boron diffusion was carried out at 900°C in N_2 ambient, using a spin-on-glass source which enables us to obtain a high surface concentration near solid solubility. The diffusion retardation compared with bulk Si appeared clearly in SIMOXs more than UNIBOND. The reason of this was that recombination velocity of interstitial silicon in the SIMOX is larger than that in the UNIBOND wafer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / SIMOX / UNIBOND / Boron / Diffusion |
| Paper # | ED2000-91,SDM2000-91 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-91 / SDM2000-91 Ultra shallow Boron diffusion in SIMOX and UNIBOND Structures |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | SIMOX |
| Keyword(3) | UNIBOND |
| Keyword(4) | Boron |
| Keyword(5) | Diffusion |
| 1st Author's Name | Hideo Uchida |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | Eisuke Arai |
| 3rd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 2000/6/23 |
| Paper # | ED2000-91,SDM2000-91 |
| Volume (vol) | vol.100 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |