| Presentation | 2000/6/23 ED2000-90 / SDM2000-90 Photocurrent Amplification Using SOI-MOS Device Yuko Yryu, Tanemasa Asano, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new photodetection device composed of an SOI MOSFET and a photodiode is proposed and the fundamental operation of the device is experimentally studied. The photodiode is connected to the floating body of the SOI MOSFET. Carriers photo-generated in the photodiode are accumurated in the floating body to induce the lateral bipolar action of the SOI MOSFET. As a result, photocurrent is amplified by the lateral bipolar operation. Devices composed of a p-channel SOI MOSFET and a n^+p photodiode which was formed in the substrate Si were fabricated. It has been found that the current amplification factor increases with decreasing the gate length of the SOI MOSFET and the drain current can be about 70 times as much as the diode photocurrent when the gate length is 0.8 μm. Enhancement of current amplification by floating gate is also demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | photodetection device / composite device / SOI / MOSFET / lateral bipolar transistor / floating body effect |
| Paper # | ED2000-90,SDM2000-90 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-90 / SDM2000-90 Photocurrent Amplification Using SOI-MOS Device |
| Sub Title (in English) | |
| Keyword(1) | photodetection device |
| Keyword(2) | composite device |
| Keyword(3) | SOI |
| Keyword(4) | MOSFET |
| Keyword(5) | lateral bipolar transistor |
| Keyword(6) | floating body effect |
| 1st Author's Name | Yuko Yryu |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Tanemasa Asano |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 2000/6/23 |
| Paper # | ED2000-90,SDM2000-90 |
| Volume (vol) | vol.100 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |