| Presentation | 2000/6/23 ED2000-89 / SDM2000-89 A SiRF Switch MMIC for the Cellular Frequency Band Using SOI-CMOS Technology Atsushi Kanda, Masahiro Muraguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A CMOS single-pole-double-throw (SPDT) switch MMIC with 0.7-dB insertion loss and more than 30-dB isolation at 2 GHz is demonstrated using silicon-on-insulator (SOI) technology on a high-resistivity Si substrate. The performance is comparable to that of the commercially available GaAs SPDT switch, and the MMIC can be fabricated in the standard CMOS LSI process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Switch / SOI / High-Resistivity Substrate / CMOS / Microwave / Cellular |
| Paper # | ED2000-89,SDM2000-89 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-89 / SDM2000-89 A SiRF Switch MMIC for the Cellular Frequency Band Using SOI-CMOS Technology |
| Sub Title (in English) | |
| Keyword(1) | Switch |
| Keyword(2) | SOI |
| Keyword(3) | High-Resistivity Substrate |
| Keyword(4) | CMOS |
| Keyword(5) | Microwave |
| Keyword(6) | Cellular |
| 1st Author's Name | Atsushi Kanda |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Masahiro Muraguchi |
| 2nd Author's Affiliation | NTT Electronics Corporation |
| Date | 2000/6/23 |
| Paper # | ED2000-89,SDM2000-89 |
| Volume (vol) | vol.100 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |