| Presentation | 2000/6/23 ED2000-88 / SDM2000-88 The influence of parasitic bipolar transistor on high-frequency performance of thin-film SOI power MOSFETs Yasushi Hiraoka, Satoshi Matsumoto, Tatsuo Sakai, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have studied the influence of a parasitic bipolar transistor on the high-frequency characteristics of an SOI power MOSFET. We carried out two types of numerical simulation based on experimentally obtained results : a transient simulation and a harmonic balance simulation. The results indicate that the parasitic bipolar effect degraded the high-frequency performance of the RF power MOSFET, for example, gain, power added efficiency, and intermodulation distortion. In particular, the third-order intermodulation distortion of the quasi-SOI device was about 23% better than that of the conventional SOI device under 2 GHz operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / RF / Power MOSFET / Power amplifier and parasitic bipolar effect |
| Paper # | ED2000-88,SDM2000-88 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-88 / SDM2000-88 The influence of parasitic bipolar transistor on high-frequency performance of thin-film SOI power MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | RF |
| Keyword(3) | Power MOSFET |
| Keyword(4) | Power amplifier and parasitic bipolar effect |
| 1st Author's Name | Yasushi Hiraoka |
| 1st Author's Affiliation | NTT Telecommunications Energy Laboratories() |
| 2nd Author's Name | Satoshi Matsumoto |
| 2nd Author's Affiliation | NTT Telecommunications Energy Laboratories |
| 3rd Author's Name | Tatsuo Sakai |
| 3rd Author's Affiliation | NTT Telecommunications Energy Laboratories |
| Date | 2000/6/23 |
| Paper # | ED2000-88,SDM2000-88 |
| Volume (vol) | vol.100 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |