Presentation 2000/6/23
ED2000-87 / SDM2000-87 A 0.5-μm-rule Thin-film SOI Power MOSFET for Radio-frequency applications
Satoshi Matsumoto, Yasushi Hiraoka, Tatsuo Sakai,
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Abstract(in English) A state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET was fabricated to evaluate its radio frequence. The fabricated device with channel length was 0.5 μm and drain offset length of 0.4 μm showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cut-off and maximum oscillation frequencyies were 14.7 and 19 GHz, respectively. Its power added efficiency at 2 GHz was 64%.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / RF / Power MOSFET / Power added efficiency
Paper # ED2000-87,SDM2000-87
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Committee ED
Conference Date 2000/6/23(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2000-87 / SDM2000-87 A 0.5-μm-rule Thin-film SOI Power MOSFET for Radio-frequency applications
Sub Title (in English)
Keyword(1) SOI
Keyword(2) RF
Keyword(3) Power MOSFET
Keyword(4) Power added efficiency
1st Author's Name Satoshi Matsumoto
1st Author's Affiliation NTT Telecommunications Energy Laboratories()
2nd Author's Name Yasushi Hiraoka
2nd Author's Affiliation NTT Telecommunications Energy Laboratories
3rd Author's Name Tatsuo Sakai
3rd Author's Affiliation NTT Telecommunications Energy Laboratories
Date 2000/6/23
Paper # ED2000-87,SDM2000-87
Volume (vol) vol.100
Number (no) 149
Page pp.pp.-
#Pages 5
Date of Issue