Presentation | 2000/6/23 ED2000-87 / SDM2000-87 A 0.5-μm-rule Thin-film SOI Power MOSFET for Radio-frequency applications Satoshi Matsumoto, Yasushi Hiraoka, Tatsuo Sakai, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A state-of-the-art 0.5-μm-rule thin-film SOI power MOSFET was fabricated to evaluate its radio frequence. The fabricated device with channel length was 0.5 μm and drain offset length of 0.4 μm showed excellent performance. Its breakdown voltage was more than 10 V, which is sufficient for a lithium ion battery to be used as a power source. Its cut-off and maximum oscillation frequencyies were 14.7 and 19 GHz, respectively. Its power added efficiency at 2 GHz was 64%. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI / RF / Power MOSFET / Power added efficiency |
Paper # | ED2000-87,SDM2000-87 |
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Committee | ED |
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Conference Date | 2000/6/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ED2000-87 / SDM2000-87 A 0.5-μm-rule Thin-film SOI Power MOSFET for Radio-frequency applications |
Sub Title (in English) | |
Keyword(1) | SOI |
Keyword(2) | RF |
Keyword(3) | Power MOSFET |
Keyword(4) | Power added efficiency |
1st Author's Name | Satoshi Matsumoto |
1st Author's Affiliation | NTT Telecommunications Energy Laboratories() |
2nd Author's Name | Yasushi Hiraoka |
2nd Author's Affiliation | NTT Telecommunications Energy Laboratories |
3rd Author's Name | Tatsuo Sakai |
3rd Author's Affiliation | NTT Telecommunications Energy Laboratories |
Date | 2000/6/23 |
Paper # | ED2000-87,SDM2000-87 |
Volume (vol) | vol.100 |
Number (no) | 149 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |