| Presentation | 2000/6/23 ED2000-81 / SDM2000-81 A 4 kV SiC Epitaxial PN Junction Diode with a Low On-resistance K. Fujihira, S. Tamura, T. Kimoto, H. Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The 31 μm thick n^- and p-type epilayers were grown by horizontal cold-wall CVD with nitrogen and aluminum doping, respectively. The diode exhibited a very high breakdown voltage of 4.2 kV with a low on-resistance of 4.6mΩcm^2. This on-resistance is one-order-of-magnitude lower than that of a Si PIN diode with a similar breakdown voltage. The fabricated SiC PN diode showed fast switching with a turn-off time of 0.35μsec. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / PN junction diode / Power device / On-resistance |
| Paper # | ED2000-81,SDM2000-81 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-81 / SDM2000-81 A 4 kV SiC Epitaxial PN Junction Diode with a Low On-resistance |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | PN junction diode |
| Keyword(3) | Power device |
| Keyword(4) | On-resistance |
| 1st Author's Name | K. Fujihira |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | S. Tamura |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | T. Kimoto |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | H. Matsunami |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2000/6/23 |
| Paper # | ED2000-81,SDM2000-81 |
| Volume (vol) | vol.100 |
| Number (no) | 149 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |