Presentation | 2000/6/23 ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries Seong-jong Yoo, Jongho Lee, Hyungcheol Shin, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The nanocrystal memory is the most promising candidate of post giga-bit EEPROM since it has some good properties as follows : fast and low-voltage operation using direct tunneling mechanism due to thin gate dielectrics, good nonvolatility due to suppression of charge loss between dots as storage nodes, and simple structure of one transistor-one cell. So it is so important to form nanocrystals. In this paper, a new method to form nanocrystals using wet etching is proposed and characteristics of the memory using this method is analyzed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Poly-Si / grain boundaries / wet etching / nanocrystal memory |
Paper # | ED2000-80,SDM2000-80 |
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Committee | ED |
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Conference Date | 2000/6/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | KOR |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries |
Sub Title (in English) | |
Keyword(1) | Poly-Si |
Keyword(2) | grain boundaries |
Keyword(3) | wet etching |
Keyword(4) | nanocrystal memory |
1st Author's Name | Seong-jong Yoo |
1st Author's Affiliation | Dept. of EECS, KAIST() |
2nd Author's Name | Jongho Lee |
2nd Author's Affiliation | School of Electrical Eng., Wonkwang Univ. |
3rd Author's Name | Hyungcheol Shin |
3rd Author's Affiliation | Dept. of EECS, KAIST |
Date | 2000/6/23 |
Paper # | ED2000-80,SDM2000-80 |
Volume (vol) | vol.100 |
Number (no) | 149 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |