Presentation 2000/6/23
ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
Seong-jong Yoo, Jongho Lee, Hyungcheol Shin,
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Abstract(in English) The nanocrystal memory is the most promising candidate of post giga-bit EEPROM since it has some good properties as follows : fast and low-voltage operation using direct tunneling mechanism due to thin gate dielectrics, good nonvolatility due to suppression of charge loss between dots as storage nodes, and simple structure of one transistor-one cell. So it is so important to form nanocrystals. In this paper, a new method to form nanocrystals using wet etching is proposed and characteristics of the memory using this method is analyzed.
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Keyword(in English) Poly-Si / grain boundaries / wet etching / nanocrystal memory
Paper # ED2000-80,SDM2000-80
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Committee ED
Conference Date 2000/6/23(1days)
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Language KOR
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2000-80 / SDM2000-80 MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
Sub Title (in English)
Keyword(1) Poly-Si
Keyword(2) grain boundaries
Keyword(3) wet etching
Keyword(4) nanocrystal memory
1st Author's Name Seong-jong Yoo
1st Author's Affiliation Dept. of EECS, KAIST()
2nd Author's Name Jongho Lee
2nd Author's Affiliation School of Electrical Eng., Wonkwang Univ.
3rd Author's Name Hyungcheol Shin
3rd Author's Affiliation Dept. of EECS, KAIST
Date 2000/6/23
Paper # ED2000-80,SDM2000-80
Volume (vol) vol.100
Number (no) 149
Page pp.pp.-
#Pages 4
Date of Issue