Presentation 2000/6/23
ED2000-77 / SDM2000-77 Reliability of Low Temperature Poly-Silicon Thin Film Transistors under Dynamic Stress
Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, Y. Tsuchihashi,
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Abstract(in English) Reliability of low temperature poly-Si under dynamic stress was evaluated. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and number of repetition of pulse. With the decrease of falling time, degradation was accelerated. From the analysis of emission microscope, photon emission was observed under dynamic stress. Based on these results, degradation is considered to occur when the gate pulse falls. When gate pulse falls, hot electrons will be generated making electron traps in the poly-silicon. We have confirmed that the reliability is improved by adopting LDD structure.
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Keyword(in English) Low Temperature Poly-Si / Reliability / Hot Electron / System On Panel
Paper # ED2000-77,SDM2000-77
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Committee ED
Conference Date 2000/6/23(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2000-77 / SDM2000-77 Reliability of Low Temperature Poly-Silicon Thin Film Transistors under Dynamic Stress
Sub Title (in English)
Keyword(1) Low Temperature Poly-Si
Keyword(2) Reliability
Keyword(3) Hot Electron
Keyword(4) System On Panel
1st Author's Name Y. Uraoka
1st Author's Affiliation Graduate School of Materials Science Nara Institute of Science and Technology()
2nd Author's Name T. Hatayama
2nd Author's Affiliation Graduate School of Materials Science Nara Institute of Science and Technology
3rd Author's Name T. Fuyuki
3rd Author's Affiliation Graduate School of Materials Science Nara Institute of Science and Technology
4th Author's Name T. Kawamura
4th Author's Affiliation LCD Division, Matsushita Electric Industrial Co. Ltd
5th Author's Name Y. Tsuchihashi
5th Author's Affiliation LCD Division, Matsushita Electric Industrial Co. Ltd
Date 2000/6/23
Paper # ED2000-77,SDM2000-77
Volume (vol) vol.100
Number (no) 149
Page pp.pp.-
#Pages 5
Date of Issue