| Presentation | 2000/6/21 ED2000-47 / SDM2000-47 New Process Technologies for Copper/Low-k Metallization : Abrasive-Free Copper CMP(AFP) and New Low-k Material:Methyl-silicon-oxycarbide(MTES) Kenji Hinode, Sei-ichi Kondo, Takeshi Furusawa, Noriyuki Sakuma, Ryuzaki Daisuke, Ken-ichi Takeda, Machida Shun-taro, Yasushi Goto, Hizuru Yamaguchi, Yoshio Homma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A newly developed abrasive-free chemical agent significaltly reduces erosin and dishing during copper polishing. As a result controllability of electrical resistance of copper wiring is improved and durability to electrical dielectric breakdown is made higher. A fluorine-free CVD low-k film was also developed. Its mechanical toughness makes it easier to fabricate a simple and reliable dielectric structure. The developed agent and low-k film provide low-parasitic-capacitance copper lines(down to 0.5 μm pitch)with smaller resistance deviation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Abrasive-Free / Copper Wiring / Parasitic Capacitance / CMP / Mechanical Toughness / Mutilevel Metallization |
| Paper # | ED2000-47,SDM2000-47 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-47 / SDM2000-47 New Process Technologies for Copper/Low-k Metallization : Abrasive-Free Copper CMP(AFP) and New Low-k Material:Methyl-silicon-oxycarbide(MTES) |
| Sub Title (in English) | |
| Keyword(1) | Abrasive-Free |
| Keyword(2) | Copper Wiring |
| Keyword(3) | Parasitic Capacitance |
| Keyword(4) | CMP |
| Keyword(5) | Mechanical Toughness |
| Keyword(6) | Mutilevel Metallization |
| 1st Author's Name | Kenji Hinode |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | Sei-ichi Kondo |
| 2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 3rd Author's Name | Takeshi Furusawa |
| 3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 4th Author's Name | Noriyuki Sakuma |
| 4th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 5th Author's Name | Ryuzaki Daisuke |
| 5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 6th Author's Name | Ken-ichi Takeda |
| 6th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 7th Author's Name | Machida Shun-taro |
| 7th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 8th Author's Name | Yasushi Goto |
| 8th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 9th Author's Name | Hizuru Yamaguchi |
| 9th Author's Affiliation | Device Development Center, Hitachi, Ltd. |
| 10th Author's Name | Yoshio Homma |
| 10th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| Date | 2000/6/21 |
| Paper # | ED2000-47,SDM2000-47 |
| Volume (vol) | vol.100 |
| Number (no) | 147 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |