| Presentation | 2000/3/9 Low-Temperature Preparation of Sr_2(Ta_<1-x>, Nb_x)_2O_7 thin films by Pulsed Laser Deposition and its Electrical Properties T. Nakaiso, H. Sugiyama, M. Noda, M. Okuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Sr_2(Ta_<1-x>, Nb_x)_2O_7(STN)ferroelectric thin films have been prepared on Pt / Ti / SiO_2 / Si substrate at low temperature of 600℃ by Pulsed Laser Deposition Method. (110)-, (151)-and (172)-oriented STN thin films are deposited in N_2O atmosphere for composition ratio of X=0.2 and 0.3. A symmetrical D-E hysteresis loop of the film for composition ratio of X=0.3 is observed, the remanent polarization is 0.4μC / cm^2 and the coercive force is 30kV / cm. Remanent polarization does not change after 10^<10> cycles of polarization reversal. Dielectic constant at room temperature is about 70 at 1MHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Sr_2(Ta_<1-x>, Nb_x)_2O_7(STN) / ferroelectric thin film / PLD |
| Paper # | ED99-326, SDM99-219 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/3/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Temperature Preparation of Sr_2(Ta_<1-x>, Nb_x)_2O_7 thin films by Pulsed Laser Deposition and its Electrical Properties |
| Sub Title (in English) | |
| Keyword(1) | Sr_2(Ta_<1-x>, Nb_x)_2O_7(STN) |
| Keyword(2) | ferroelectric thin film |
| Keyword(3) | PLD |
| 1st Author's Name | T. Nakaiso |
| 1st Author's Affiliation | Ared of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | H. Sugiyama |
| 2nd Author's Affiliation | Ared of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | M. Noda |
| 3rd Author's Affiliation | Ared of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | M. Okuyama |
| 4th Author's Affiliation | Ared of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| Date | 2000/3/9 |
| Paper # | ED99-326, SDM99-219 |
| Volume (vol) | vol.99 |
| Number (no) | 671 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |