Presentation 1999/8/26
Large Signal Analysis Using GaAs FET Monte Carlo Simulator
Yasuko Hori, Waiter Contrata, Yuji Ando, Norihiko Samoto, Masaaki Kuzuhara,
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Abstract(in English) Large signal characteristics of a Gaps FET were calculated by adding an external matching circuit to a Monte Cargo device simulator. The circuit (LCR configuration) allows the impedance to be designed flexibly. Breakdown was modeled by introducing a gate tunneling current, and the resulting change in load line was analyzed, Impact ionization under large signal amplification was alsoinvestigated. The results show that the Monte Carlo device model is not only useful for the design of power amplifiers, including matching circuits, but also for the analysis of device physics under RF amplification.
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Keyword(in English) Monte Carlo simulation / GaAs FET / large signal analysis / matching circuit / impact ionization
Paper # ED99-147
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Committee ED
Conference Date 1999/8/26(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Large Signal Analysis Using GaAs FET Monte Carlo Simulator
Sub Title (in English)
Keyword(1) Monte Carlo simulation
Keyword(2) GaAs FET
Keyword(3) large signal analysis
Keyword(4) matching circuit
Keyword(5) impact ionization
1st Author's Name Yasuko Hori
1st Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporatiorn()
2nd Author's Name Waiter Contrata
2nd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporatiorn
3rd Author's Name Yuji Ando
3rd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporatiorn
4th Author's Name Norihiko Samoto
4th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporatiorn
5th Author's Name Masaaki Kuzuhara
5th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporatiorn
Date 1999/8/26
Paper # ED99-147
Volume (vol) vol.99
Number (no) 281
Page pp.pp.-
#Pages 6
Date of Issue