| Presentation | 1999/7/23 Electrical Properties of Pt/SrBi_2Ta_2O_9/Pt/SiO_2/Si MFMIS Structures and FETs with Various Area Ratios of MFM capacitor to Pt Floating Gate Eisuke Tokumitsu, Atsuhiro Amano, Gen Fujii, Hiroshi Ishiwara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the fabrication and characterization of Pt/SrBi_2Ta_2O_9/Pt/SiO_2/Si MFMIS structures and FETs. The area ratio of the Pt/SrBi_2Ta_2O_9/Pt MFM capacitor to the Pt/SiO_2/Si MIS structure is varied from 1:10 to 1:10. It is found that by using a small MFM capacitor on a large MIS structure, a large memory window more than 4 V and a long data retention time can be obtained. Furthermore, non-volatile memory operations of Pt/SrBi_2Ta_2O_9/Pt/SiO_2/Si MFMIS-FETs is demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric memory / ferroelectric-gate transisitor / MFMISFET / SrBi_2Ta_2O_9 |
| Paper # | ED99-121 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Pt/SrBi_2Ta_2O_9/Pt/SiO_2/Si MFMIS Structures and FETs with Various Area Ratios of MFM capacitor to Pt Floating Gate |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric memory |
| Keyword(2) | ferroelectric-gate transisitor |
| Keyword(3) | MFMISFET |
| Keyword(4) | SrBi_2Ta_2O_9 |
| 1st Author's Name | Eisuke Tokumitsu |
| 1st Author's Affiliation | Precision & Intelligence Laboratory, Tokyo Institute of Technology() |
| 2nd Author's Name | Atsuhiro Amano |
| 2nd Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| 3rd Author's Name | Gen Fujii |
| 3rd Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| 4th Author's Name | Hiroshi Ishiwara |
| 4th Author's Affiliation | Precision & Intelligence Laboratory, Tokyo Institute of Technology:Frontier Collaborative Research Center, Tokyo Institute of Technology |
| Date | 1999/7/23 |
| Paper # | ED99-121 |
| Volume (vol) | vol.99 |
| Number (no) | 230 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |