Presentation 1999/7/22
A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs
Sang-Gug Lee, Sang-Oh Lee, Jin-Su Ko, YunSeok Cho,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel approach for DC screening of the monolithic silicon bipolar RFICs for noise figure (NF) and power gain (S_<21>) is presented. The proposed technique, which is applied to a 1.8 GHz driver amp, demonstrates excellent correlation between the resistance of a proposed r_b test structure and the NF and S_<21> of the RFIC. This study show that setting a limit on the base resistance of bipolar junction transistors (BJTs) is effective in screening the AC performances of any RFICs as well as transistors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Driver Amp / RF IC / Bipolar Junction Transistor / Noise Figure / Power Gain
Paper # ED99-107
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Committee ED
Conference Date 1999/7/22(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 1.8GHz Driver Amp Design and Production DC Screening Techniques for RF Performances of Bipolar ICs
Sub Title (in English)
Keyword(1) Driver Amp
Keyword(2) RF IC
Keyword(3) Bipolar Junction Transistor
Keyword(4) Noise Figure
Keyword(5) Power Gain
1st Author's Name Sang-Gug Lee
1st Author's Affiliation Information and Communications University()
2nd Author's Name Sang-Oh Lee
2nd Author's Affiliation Samsung Electronics
3rd Author's Name Jin-Su Ko
3rd Author's Affiliation Samsung Electronics
4th Author's Name YunSeok Cho
4th Author's Affiliation Handong University
Date 1999/7/22
Paper # ED99-107
Volume (vol) vol.99
Number (no) 229
Page pp.pp.-
#Pages 6
Date of Issue