Presentation | 1999/7/22 Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications Seonghearn Lee, Hyun Kyu Yu, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Gate voltage-dependence data of MOSFET model parameters obtained by the RF extraction method based on Z-parameters expressions has been presented. These extracted RF data are shown to be explainable from short-channel or nonquasi-static effects. The gate voltage-dependencies of intrinsic capacitances and conductances for different size of MOSFETs show the linear scaling behavior with a reasonable error in terms of total gate width. This information will be very useful to develop a scalable large-signal model of multi-finger MOSFETs for nonlinear RF IC design. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOSFETs / RF IC / MOSFET model / equivalent circuits / parameter extraction / modeling |
Paper # | ED99-106 |
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Committee | ED |
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Conference Date | 1999/7/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications |
Sub Title (in English) | |
Keyword(1) | MOSFETs |
Keyword(2) | RF IC |
Keyword(3) | MOSFET model |
Keyword(4) | equivalent circuits |
Keyword(5) | parameter extraction |
Keyword(6) | modeling |
1st Author's Name | Seonghearn Lee |
1st Author's Affiliation | Department of Electronic Engineering, Hankuk University of Foreign Studies() |
2nd Author's Name | Hyun Kyu Yu |
2nd Author's Affiliation | Micro-Electronics Technology Laboratory, Electronics and Telecommunications Research Institute |
Date | 1999/7/22 |
Paper # | ED99-106 |
Volume (vol) | vol.99 |
Number (no) | 229 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |