Presentation 1999/7/22
Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications
Seonghearn Lee, Hyun Kyu Yu,
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Abstract(in English) Gate voltage-dependence data of MOSFET model parameters obtained by the RF extraction method based on Z-parameters expressions has been presented. These extracted RF data are shown to be explainable from short-channel or nonquasi-static effects. The gate voltage-dependencies of intrinsic capacitances and conductances for different size of MOSFETs show the linear scaling behavior with a reasonable error in terms of total gate width. This information will be very useful to develop a scalable large-signal model of multi-finger MOSFETs for nonlinear RF IC design.
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Keyword(in English) MOSFETs / RF IC / MOSFET model / equivalent circuits / parameter extraction / modeling
Paper # ED99-106
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Committee ED
Conference Date 1999/7/22(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Accurate Extraction of Bias-Dependent MOSFET Parameters for RF Model Applications
Sub Title (in English)
Keyword(1) MOSFETs
Keyword(2) RF IC
Keyword(3) MOSFET model
Keyword(4) equivalent circuits
Keyword(5) parameter extraction
Keyword(6) modeling
1st Author's Name Seonghearn Lee
1st Author's Affiliation Department of Electronic Engineering, Hankuk University of Foreign Studies()
2nd Author's Name Hyun Kyu Yu
2nd Author's Affiliation Micro-Electronics Technology Laboratory, Electronics and Telecommunications Research Institute
Date 1999/7/22
Paper # ED99-106
Volume (vol) vol.99
Number (no) 229
Page pp.pp.-
#Pages 6
Date of Issue