| Presentation | 1999/7/22 Characteristic of Schottky Source/Drain SOI-MOSFET Tanemasa Asano, Yasuhiro Ochiai, Takayori Shikano, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Characteristics of MOSFETs with Schottky contacts at the source and drain have been investigated. The MOSFETs were fabricated on SOI wafers and bulk Si wafers. PtSi and Er silicide were employed as the contact material to investigate change in characteristic with the Schottky barrier height. It has been found that the MOSFET operates in both n- and p-channel modes, where carriers are injected from the source to the channel either by thermal emission or by internal field emission. The operation mode with these two mechanisms depends on the Schottky barrier height of the contact material. The leakage current of the MOSFET has been found to be determined by the leak current of the reverse biased drain current. SOI-MOSFETs shows superior cutoff characteristic due to the presence of the buried oxide. Shrinkage of the gate length of SOT-MOSFET down to 0.2 μm did not result in increase in cutoff leakage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Schottky MOS / SOI-MOSFET / tunneling device / field emission / Pt silicide / Er silicide |
| Paper # | ED99-102 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristic of Schottky Source/Drain SOI-MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Schottky MOS |
| Keyword(2) | SOI-MOSFET |
| Keyword(3) | tunneling device |
| Keyword(4) | field emission |
| Keyword(5) | Pt silicide |
| Keyword(6) | Er silicide |
| 1st Author's Name | Tanemasa Asano |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Yasuhiro Ochiai |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| 3rd Author's Name | Takayori Shikano |
| 3rd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 1999/7/22 |
| Paper # | ED99-102 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |