| Presentation | 1999/7/22 Ultra-thin Silicon Dioxide for MOSFET Gate Formed at Low Temperatures Utilizing Activated Oxygen Y. Ueda, K. Moriizumi, R. Sahara, T. Kimoto, T. Fuyuki, H. Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ultra-thin nanometer-scale SiO_2 films were formed at low temperatures below 500℃ by a remote plasma process. The electrical properties of formed SiO_2 films were characterized by current-voltage and high-frequency capacitance-voltage measurements. Formation of a protective oxide (pre-oxide) on the surface before oxidation reduced leakage current in the low electric field region. RTA (rapid thermal annealing) after oxidation improved the interface characteristics. Achieved SiO_2/Si interface characteristics were discussed related to the performance of a MOSFET (metal-oxide-semiconductor field effect transistor). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ultra-thin oxide / low-temperature oxidation / protective oxide / RTA / MOSFET |
| Paper # | ED99-101 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-thin Silicon Dioxide for MOSFET Gate Formed at Low Temperatures Utilizing Activated Oxygen |
| Sub Title (in English) | |
| Keyword(1) | ultra-thin oxide |
| Keyword(2) | low-temperature oxidation |
| Keyword(3) | protective oxide |
| Keyword(4) | RTA |
| Keyword(5) | MOSFET |
| 1st Author's Name | Y. Ueda |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | K. Moriizumi |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | R. Sahara |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | T. Kimoto |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 5th Author's Name | T. Fuyuki |
| 5th Author's Affiliation | Graduate School of Material Science, Nara Institute of Science and Technology |
| 6th Author's Name | H. Matsunami |
| 6th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 1999/7/22 |
| Paper # | ED99-101 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |