| Presentation | 1999/7/22 Plasma-Induced Dopant (As, P, Sb, B) Deactivation by Low-Energy Ion Bombardment (<30eV) during Silicon Epitaxial Growth Hajime Kumami, Wataru Shindo, Satoshi Hondo, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Dopant deactivation by low-energy ton bombardment (<30 eV) has been investigated for several dopants (As, P, Sb, B). B is electrically deactivated by 5 eV argon ton bombardment while threshold energies for As, P and Sb are 18 eV, 13 eV and 10 eV, respectively. This result can be interpreted from the viewpoint of "local strain" caused by an atomic size difference and an electrical effect. Experimental results are found to be in excellent agreement with the local strain model presented in this paper. Since the dopant deactivation caused by local strain us dependent upon ion bombardment, ion bombardment energy must be precisely controlled to be lower than the threshold energy an order to achieve fully activated impurities in silicon crystals. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon / plasma / ion energy / deactivation / dopant / strain / damage |
| Paper # | ED99-97 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Plasma-Induced Dopant (As, P, Sb, B) Deactivation by Low-Energy Ion Bombardment (<30eV) during Silicon Epitaxial Growth |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | plasma |
| Keyword(3) | ion energy |
| Keyword(4) | deactivation |
| Keyword(5) | dopant |
| Keyword(6) | strain |
| Keyword(7) | damage |
| 1st Author's Name | Hajime Kumami |
| 1st Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Wataru Shindo |
| 2nd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Satoshi Hondo |
| 3rd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 1999/7/22 |
| Paper # | ED99-97 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |