| Presentation | 1999/7/22 Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices S.-K. Hong, J.-H. Choi, S.-G. Lee, C.-Y. Kang, J.-H. Son, J.-G. Ahn, J.-M. Hwang, |
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| PDF Download Page | PDF download Page Link | |
| Abstract(in Japanese) | (See Japanese page) | |
| Abstract(in English) | Although LDD nitrogen implantation on NMOSFET can peculiarly improve hot carrier lifetime, it also develops short channel effects and I_| roll-off and thus channel length margin. These can be explained by the retardation of boron by nitrogen. Nitrogen directly affects the effective channel length by controlling the boron diffusion in channel direction. We can conclude that the nitrogen implantation technique has some trade-off between the device characteristics and the lifetime reliabilities in NMOSFET, but can provide more channel length margin in PMOSFET. | |
| Keyword(in Japanese) | (See Japanese page) | |
| Keyword(in English) | Nitrogen implantation / CMOS / DAHC / channel length margin / effective channel length | |
| Paper # | ED99-96 | |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of Boron Lateral Diffusion by Nitrogen Implantation in Sub-0.15mm CMOS Devices |
| Sub Title (in English) | |
| Keyword(1) | Nitrogen implantation |
| Keyword(2) | CMOS |
| Keyword(3) | DAHC |
| Keyword(4) | channel length margin |
| Keyword(5) | effective channel length |
| 1st Author's Name | S.-K. Hong |
| 1st Author's Affiliation | LG Semicon Co., Ltd, R&D Division() |
| 2nd Author's Name | J.-H. Choi |
| 2nd Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| 3rd Author's Name | S.-G. Lee |
| 3rd Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| 4th Author's Name | C.-Y. Kang |
| 4th Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| 5th Author's Name | J.-H. Son |
| 5th Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| 6th Author's Name | J.-G. Ahn |
| 6th Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| 7th Author's Name | J.-M. Hwang |
| 7th Author's Affiliation | LG Semicon Co., Ltd., R&D Division |
| Date | 1999/7/22 |
| Paper # | ED99-96 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |