| Presentation | 1999/7/22 Low temperature formation of gate-grade silicon nitride film employing microwave-excitation high-density plasma Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper focuses attention on electrical properties of ultra-thin silicon nitride films grown by radial line slot antenna (RLSA) high-density plasma system at 400℃ as an advanced gate dielectric film. The results show low density of interface trap and bulk charge, lower leakage current than jet vapor deposition (JVD) silicon nitride and thermally grown silicon oxide with same equivalent oxide thickness (EOT). Furthermore, they have high breakdown field intensity, almost no stress-induced leakage current, and very little trap generation even in high-field stress. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon nitride / High-density plasma / Jon bombardment / Gate insulator |
| Paper # | ED99-95 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature formation of gate-grade silicon nitride film employing microwave-excitation high-density plasma |
| Sub Title (in English) | |
| Keyword(1) | Silicon nitride |
| Keyword(2) | High-density plasma |
| Keyword(3) | Jon bombardment |
| Keyword(4) | Gate insulator |
| 1st Author's Name | Yuji Saito |
| 1st Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Katsuyuki Sekine |
| 2nd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Masaki Hirayama |
| 3rd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 1999/7/22 |
| Paper # | ED99-95 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |