Presentation 1999/7/22
40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
Sangyeon Han, Taejun Park, Bonkee Kim, Hyungcheol Shin, Kwyro Lee,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We experimented on the 40nm paterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, we reduced the PR thickness to 100nm, and the field size to 200μm. Then, PEB(Post Expose Bake) time and temperature, which is one of the very important factors for nano-patterning, were reduced for minimum line width. In addition, digitizing was optimized for better results. Quantum wire and quantum dot which can be used for nano-scale memory device, such as single electron memory device, were fabricated using these developed lithography technique.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) E-beam / SAL601 / Field size / PEB / digitizing method / nano-structure
Paper # ED99-94
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Committee ED
Conference Date 1999/7/22(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 40nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake and its Application to Silicon Nano-Fabrication
Sub Title (in English)
Keyword(1) E-beam
Keyword(2) SAL601
Keyword(3) Field size
Keyword(4) PEB
Keyword(5) digitizing method
Keyword(6) nano-structure
1st Author's Name Sangyeon Han
1st Author's Affiliation Department of Electrical Engineering, KAIST()
2nd Author's Name Taejun Park
2nd Author's Affiliation Department of Electrical Engineering, KAIST
3rd Author's Name Bonkee Kim
3rd Author's Affiliation Department of Electrical Engineering, KAIST
4th Author's Name Hyungcheol Shin
4th Author's Affiliation Department of Electrical Engineering, KAIST
5th Author's Name Kwyro Lee
5th Author's Affiliation Department of Electrical Engineering, KAIST
Date 1999/7/22
Paper # ED99-94
Volume (vol) vol.99
Number (no) 229
Page pp.pp.-
#Pages 5
Date of Issue