| Presentation | 1999/7/22 Low temperature epitaxy of Si by remote plasma process A. Yoshida, A. Wakahara, K. Utsumi, In-Ho Bae, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have been successful in growing Si epitaxial films below 473K and even at room temperature, using remote plasma-enhanced process. In this report, we review our experimental results on the Si low temperature epitaxy. A plasma tube in concentric arrangement was used: argon and/or hydrogen plasma excited with rf power was supplied through the outer glass tube, and disilane source gas was introduced through the inner stainless tube. In-situ surface cleaning with hydrogen plasma was essential. The dependence on the substrate temperature, rf power and gas flow rate has been investigated. The deposited films were characterized by RHEED, TEM and RBS measurements. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | plasma-excited process / low temperature epitaxy / Si epitaxial growth / RBS |
| Paper # | ED99-85 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature epitaxy of Si by remote plasma process |
| Sub Title (in English) | |
| Keyword(1) | plasma-excited process |
| Keyword(2) | low temperature epitaxy |
| Keyword(3) | Si epitaxial growth |
| Keyword(4) | RBS |
| 1st Author's Name | A. Yoshida |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | A. Wakahara |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | K. Utsumi |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | In-Ho Bae |
| 4th Author's Affiliation | Department of Physics, Yeungnam University |
| Date | 1999/7/22 |
| Paper # | ED99-85 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |