| Presentation | 1999/7/22 Fabrication and Characterization of a Quantum Dot Flash Memory Taekeun Hwang, Sangyeon Han, Hyun-ju Lee, Hyungcheol Shin, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The essential technology for fabricating the quantum dot flash memory is the nanolithography. With E-beam paterning technology and Cl_2 based RIE etching, self-aligned 100 nm wide quantum dot and 100nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift is about 0.4 V and the corresponding number of electrons involved in this operation are estimated to be about 70. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | E-beam lithography / SOI / quantum dot / RIE / memory |
| Paper # | ED99-83 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/7/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of a Quantum Dot Flash Memory |
| Sub Title (in English) | |
| Keyword(1) | E-beam lithography |
| Keyword(2) | SOI |
| Keyword(3) | quantum dot |
| Keyword(4) | RIE |
| Keyword(5) | memory |
| 1st Author's Name | Taekeun Hwang |
| 1st Author's Affiliation | LG Semicon. Co.() |
| 2nd Author's Name | Sangyeon Han |
| 2nd Author's Affiliation | / KAIST |
| 3rd Author's Name | Hyun-ju Lee |
| 3rd Author's Affiliation | KAIST |
| 4th Author's Name | Hyungcheol Shin |
| 4th Author's Affiliation | |
| Date | 1999/7/22 |
| Paper # | ED99-83 |
| Volume (vol) | vol.99 |
| Number (no) | 229 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |