Presentation 1999/7/22
Thermal Oxidation Characteristics of Oxide Grown on Si Exposed to Nitrogen Plasma and its Reliability
Akihiro Ikeda, Chika Fujiki, Kenichi Takagi, Yukinori Kuroki,
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Abstract(in English) Thermal oxidation characteristics and reliability of SiO_2 grown on Si exposed to nitrogen plasma were evaluated, 110Å thick SiO_2 was grown with rapid thermal oxidation of 90sec without the nitrogen plasma exposure. While, SiO_2 thickness was 92Å and 61Å for the same thermal oxidation time with lightly and heavily plasma nitridation, respectively. This decreasing of SiO_2 growth rates might be associated to nitrogen atoms incorporated at SiO_2/Si by the nitrogen plasma exposure. For the SiO_2 without the nitrogen plasma exposure, tunneling current at -6MV/cm gate electric field was increased from -3.5A/cm^2 to -13.6A/cm^2 by the current stress of -5×10^<-7>A/cm^2 for 100sec. While, tunneling current was not increased by the same current stress for the lightly nitrided SiO_2.
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Keyword(in English) plasma nitridation / rapid thermal oxidation / oxynitride / reliability
Paper # ED99-82
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Committee ED
Conference Date 1999/7/22(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal Oxidation Characteristics of Oxide Grown on Si Exposed to Nitrogen Plasma and its Reliability
Sub Title (in English)
Keyword(1) plasma nitridation
Keyword(2) rapid thermal oxidation
Keyword(3) oxynitride
Keyword(4) reliability
1st Author's Name Akihiro Ikeda
1st Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University()
2nd Author's Name Chika Fujiki
2nd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
3rd Author's Name Kenichi Takagi
3rd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
4th Author's Name Yukinori Kuroki
4th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
Date 1999/7/22
Paper # ED99-82
Volume (vol) vol.99
Number (no) 229
Page pp.pp.-
#Pages 6
Date of Issue