Presentation | 1999/7/22 A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond Jun-Oh Choi, Sung-Keun Chang, Sang-Hee Lee, Seon-Soon Kim, Yong-Hae Kim, Dae-Hee Hahn, Hyung-Duck Kim, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 0.1μm CMOS Technology using W/WN_x/Polysilicon dual gate electrode for 4G DRAM is presented in this paper. The polymetal(W/WN_x/Polysilicon) gate is defined down to 0.12μm and it shows 3.3Ω/□ sheet resistance. We make the surface channel pMOSFET(SC-pMOSFET) with 4.5nm pure oxide gate dielectric. It shows high short channel immunity, no boron penetration and good charge-to-breakdown(Q_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | W/WN_x/Polysilicon / 4G DRAM / dual gate electrode / tungsten / surface channel pMOSFET(SC-pMOSFET) |
Paper # | ED99-81 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 1999/7/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 0.1μm CMOS Technology using W/WN_x/Polysilicon Dual Gate Electrode for 4G DRAM and Beyond |
Sub Title (in English) | |
Keyword(1) | W/WN_x/Polysilicon |
Keyword(2) | 4G DRAM |
Keyword(3) | dual gate electrode |
Keyword(4) | tungsten |
Keyword(5) | surface channel pMOSFET(SC-pMOSFET) |
1st Author's Name | Jun-Oh Choi |
1st Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics() |
2nd Author's Name | Sung-Keun Chang |
2nd Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
3rd Author's Name | Sang-Hee Lee |
3rd Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
4th Author's Name | Seon-Soon Kim |
4th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
5th Author's Name | Yong-Hae Kim |
5th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
6th Author's Name | Dae-Hee Hahn |
6th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
7th Author's Name | Hyung-Duck Kim |
7th Author's Affiliation | Semiconductor Advanced Research Division, Hyundai Electronics |
Date | 1999/7/22 |
Paper # | ED99-81 |
Volume (vol) | vol.99 |
Number (no) | 229 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |