| Presentation | 1999/5/20 Effect of impurity in CuInSe_2 by ion implantation T. Tanaka, A. Wakahara, T. Ohshima, H. Itoh, S. Okada, A. Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently CuInSe_2 and related chalcopyrites have been received much attention as a potential candidate for solar cell with high efficiency, low cost, and excellent stability. In this study, we have investigated the effect of Mg on the characteristics of CuInSe_2 thin films using ion implantation technique, in order to clarify the doping effect by extrinsic dopants. After annealing, all implanted films showed n-type conduction, and the carrier concentration was increased with increasing the Mg concentration. Conseqently it was found that Mg act as a donor in CuInSe_2 with the ionization energy of about 53meV |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuInSe_2 / doping / ion implantation / RF sputtering / chalcopyrite structure |
| Paper # | ED99-38 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of impurity in CuInSe_2 by ion implantation |
| Sub Title (in English) | |
| Keyword(1) | CuInSe_2 |
| Keyword(2) | doping |
| Keyword(3) | ion implantation |
| Keyword(4) | RF sputtering |
| Keyword(5) | chalcopyrite structure |
| 1st Author's Name | T. Tanaka |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | A. Wakahara |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 3rd Author's Name | T. Ohshima |
| 3rd Author's Affiliation | Japan Atomic Energy Research Institute |
| 4th Author's Name | H. Itoh |
| 4th Author's Affiliation | Japan Atomic Energy Research Institute |
| 5th Author's Name | S. Okada |
| 5th Author's Affiliation | Japan Atomic Energy Research Institute |
| 6th Author's Name | A. Yoshida |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| Date | 1999/5/20 |
| Paper # | ED99-38 |
| Volume (vol) | vol.99 |
| Number (no) | 63 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |