| Presentation | 1999/5/20 Development of High Efficiency Silicon RF - Power MOSFET Y. Kusakari, Masatoshi M, T. Fujioka, K. Katsueda, Y. Matsunaga, I. Kohjiro, K. Onozawa, T. Sato, I. Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A high efficiency silicon RF-power MOSFET has been developed for use in power amplifiers of 900-MHz band GSM handset phones with 3. 6V supply voltage. To increase power efficiency, we used a CMOS LSI process technology with 0.45-μm gate length. Features of this MOSFET include a 6.9-Ωmm on-state resistance, 13-V drain breakdown voltage and 11-GHz cut-off freqency. As a result, we attained RF characteristics of 1.8 W-output power, 10-dB power gain, and 60% power-added efficiency. A RF power amplifier module using this MOSFET chip achieves 4.0-W output power and 50-% total efficiency. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GSM / RF power module / power MOSFET / Scale down / power efficiency |
| Paper # | ED99-33 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/5/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of High Efficiency Silicon RF - Power MOSFET |
| Sub Title (in English) | |
| Keyword(1) | GSM |
| Keyword(2) | RF power module |
| Keyword(3) | power MOSFET |
| Keyword(4) | Scale down |
| Keyword(5) | power efficiency |
| 1st Author's Name | Y. Kusakari |
| 1st Author's Affiliation | Hitachi ULSI systems Co., Ltd.() |
| 2nd Author's Name | Masatoshi M |
| 2nd Author's Affiliation | Hitachi, Ltd. |
| 3rd Author's Name | T. Fujioka |
| 3rd Author's Affiliation | Hitachi, Ltd. |
| 4th Author's Name | K. Katsueda |
| 4th Author's Affiliation | Hitachi, Ltd. |
| 5th Author's Name | Y. Matsunaga |
| 5th Author's Affiliation | Hitachi, Ltd. |
| 6th Author's Name | I. Kohjiro |
| 6th Author's Affiliation | Hitachi, Ltd. |
| 7th Author's Name | K. Onozawa |
| 7th Author's Affiliation | Hitachi, Ltd. |
| 8th Author's Name | T. Sato |
| 8th Author's Affiliation | Hitachi Tohbu Semiconductor, Ltd. |
| 9th Author's Name | I. Yoshida |
| 9th Author's Affiliation | Hitachi, Ltd. |
| Date | 1999/5/20 |
| Paper # | ED99-33 |
| Volume (vol) | vol.99 |
| Number (no) | 63 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |