Presentation 1999/6/25
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs
Hideaki Matsuzaki, Toshihiro Itoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) An RTD (resonant tunneling diode)-based flip-flop circuit with a new configuration is proposed. The circuit features an SCFL interface for both input and output, and achieves high-speed operation with a simplified configuration. The circuit consists of only two RTDs and three HEMTs (high electron mobility transistors), and works as a delayed flip-flop (D-FF) with return-to-zero (RZ) mode output. 50Gbit/s operation is confirmed by SPICE simulation for the SCFL-interfaced D-FF with the proposed configuration. A static binary frequency divider (T-FF) is also designed based on the same concept. It is fabricated by InP-based RTD/HEMT integration technology, and its proper operation of up to 15 GHz is confirmed experimentally.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) resonant tunneling diode / HEMT / flip-flop / frequency divider / InP
Paper # ED99-80
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Conference Information
Committee ED
Conference Date 1999/6/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs
Sub Title (in English)
Keyword(1) resonant tunneling diode
Keyword(2) HEMT
Keyword(3) flip-flop
Keyword(4) frequency divider
Keyword(5) InP
1st Author's Name Hideaki Matsuzaki
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name Toshihiro Itoh
2nd Author's Affiliation NTT Photonics Laboratories
Date 1999/6/25
Paper # ED99-80
Volume (vol) vol.99
Number (no) 146
Page pp.pp.-
#Pages 6
Date of Issue