Presentation | 1999/6/25 A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs Hideaki Matsuzaki, Toshihiro Itoh, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An RTD (resonant tunneling diode)-based flip-flop circuit with a new configuration is proposed. The circuit features an SCFL interface for both input and output, and achieves high-speed operation with a simplified configuration. The circuit consists of only two RTDs and three HEMTs (high electron mobility transistors), and works as a delayed flip-flop (D-FF) with return-to-zero (RZ) mode output. 50Gbit/s operation is confirmed by SPICE simulation for the SCFL-interfaced D-FF with the proposed configuration. A static binary frequency divider (T-FF) is also designed based on the same concept. It is fabricated by InP-based RTD/HEMT integration technology, and its proper operation of up to 15 GHz is confirmed experimentally. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | resonant tunneling diode / HEMT / flip-flop / frequency divider / InP |
Paper # | ED99-80 |
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Conference Information | |
Committee | ED |
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Conference Date | 1999/6/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs |
Sub Title (in English) | |
Keyword(1) | resonant tunneling diode |
Keyword(2) | HEMT |
Keyword(3) | flip-flop |
Keyword(4) | frequency divider |
Keyword(5) | InP |
1st Author's Name | Hideaki Matsuzaki |
1st Author's Affiliation | NTT Photonics Laboratories() |
2nd Author's Name | Toshihiro Itoh |
2nd Author's Affiliation | NTT Photonics Laboratories |
Date | 1999/6/25 |
Paper # | ED99-80 |
Volume (vol) | vol.99 |
Number (no) | 146 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |