Presentation 1999/6/25
5.8GHz-Band Single-Supply MMIC Power Amplifier for Electronic Toll Collectin System
Masaaki Nishijima, Taketo Kunihisa, Shinji Yamamoto, Takahiro Yokoyama, Mitsuru Nishitsuji, Katsunori Nishii, Osamu Ishikawa, Daisuke Ueda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A MMIC power amplifier operating with a single-supply of 3.0V has been developed for 5.8GHz Japanese Electronic Toll Collection (ETC) System. The MMIC contains two MODFETs, matching circuits (input, intermediate and output matching circuits) and bias circtrits. High dielectric constant material SrTiO_3 (STO) is used for by-pass and input coupling capacitors. Very small die size of 0.77mm^2 has been realized by using the STO capacitors and negative feedback circuit technology. High 1dB output power compression point (P_<1dB>) of 13dBm, high gain of 2l.4dB and low dissipation current of 4l.3mA have been achieved under 3.0V single-supply condition.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ETC / power amplifier / MMIC / MODFET / SrTiO_3 (STO) capacitor / single-supply
Paper # ED99-79
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Conference Information
Committee ED
Conference Date 1999/6/25(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 5.8GHz-Band Single-Supply MMIC Power Amplifier for Electronic Toll Collectin System
Sub Title (in English)
Keyword(1) ETC
Keyword(2) power amplifier
Keyword(3) MMIC
Keyword(4) MODFET
Keyword(5) SrTiO_3 (STO) capacitor
Keyword(6) single-supply
1st Author's Name Masaaki Nishijima
1st Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation()
2nd Author's Name Taketo Kunihisa
2nd Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
3rd Author's Name Shinji Yamamoto
3rd Author's Affiliation Discrete Device Division Semiconductor Cmpany Mutsushita Electronics Corporation
4th Author's Name Takahiro Yokoyama
4th Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
5th Author's Name Mitsuru Nishitsuji
5th Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
6th Author's Name Katsunori Nishii
6th Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
7th Author's Name Osamu Ishikawa
7th Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
8th Author's Name Daisuke Ueda
8th Author's Affiliation Semicoductor Device Research Center Semiconductor Company Matsushita Electronics Corporation
Date 1999/6/25
Paper # ED99-79
Volume (vol) vol.99
Number (no) 146
Page pp.pp.-
#Pages 6
Date of Issue