Presentation | 1999/6/25 A 0.15-μm / 73GHz f_ Hisamitsu Suzuki, Hiroshi Yoshida, Yasushi Kinoshita, Hiroki Fujii, Tohru Yamazaki, Tsutomu Tashiro, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Bipolar transistor / CMOS / cobalt silicide / BiCMOS / Analog / Digital |
Paper # | ED99-75 |
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Committee | ED |
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Conference Date | 1999/6/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 0.15-μm / 73GHz f_ |
Sub Title (in English) | |
Keyword(1) | Bipolar transistor |
Keyword(2) | CMOS |
Keyword(3) | cobalt silicide |
Keyword(4) | BiCMOS |
Keyword(5) | Analog |
Keyword(6) | Digital |
1st Author's Name | Hisamitsu Suzuki |
1st Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation() |
2nd Author's Name | Hiroshi Yoshida |
2nd Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation |
3rd Author's Name | Yasushi Kinoshita |
3rd Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation |
4th Author's Name | Hiroki Fujii |
4th Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation |
5th Author's Name | Tohru Yamazaki |
5th Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation |
6th Author's Name | Tsutomu Tashiro |
6th Author's Affiliation | ULSI Device Development Laboratory, NEC Corporation |
Date | 1999/6/25 |
Paper # | ED99-75 |
Volume (vol) | vol.99 |
Number (no) | 146 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |