Presentation	1999/6/25 A 0.15-μm / 73GHz f_ RF BiCMOS Technology using Cobalt Silicide Ring Extrinsie-Base Structure Hisamitsu Suzuki, Hiroshi Yoshida, Yasushi Kinoshita, Hiroki Fujii, Tohru Yamazaki, Tsutomu Tashiro,
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Abstract(in English)	This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f_) is successfully implemented into a 0.15μm dual gate CMOS process. To achieve such a bipolar transistor, a cobalt silicide (CoSi_2) ring-shaped extrinsic-base structure is newly developed. This bipolar transistor demonstrates 73 GHz f_, minimum noise figure (NF_) of 1.1 dB and a cut-off frequency emitter-to-collector break down voltage (f_T・BV_) products of 160 GHz・V, which is competitive with the previously reported SiGe-based technology.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Bipolar transistor / CMOS / cobalt silicide / BiCMOS / Analog / Digital
Paper #	ED99-75
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Conference Information
Committee	ED
Conference Date	1999/6/25(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A 0.15-μm / 73GHz f_ RF BiCMOS Technology using Cobalt Silicide Ring Extrinsie-Base Structure
Sub Title (in English)
Keyword(1)	Bipolar transistor
Keyword(2)	CMOS
Keyword(3)	cobalt silicide
Keyword(4)	BiCMOS
Keyword(5)	Analog
Keyword(6)	Digital
1st Author's Name	Hisamitsu Suzuki
1st Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation()
2nd Author's Name	Hiroshi Yoshida
2nd Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation
3rd Author's Name	Yasushi Kinoshita
3rd Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation
4th Author's Name	Hiroki Fujii
4th Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation
5th Author's Name	Tohru Yamazaki
5th Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation
6th Author's Name	Tsutomu Tashiro
6th Author's Affiliation	ULSI Device Development Laboratory, NEC Corporation
Date	1999/6/25
Paper #	ED99-75
Volume (vol)	vol.99
Number (no)	146
Page	pp.pp.-
#Pages	6
Date of Issue