| Presentation | 1999/6/25 Limitation factors of drain current in 0.1-0.2 μm MOSFET's Eiichi Murakami, Akio Nishida, Shin'ichiro Kimura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For next-generation logic LSIs, high current-drivability of 0.1-0.2 μm MOSFET's is one of major requirements for device technology. In this study, we clarify how doping-profiles determine the current drivability. Combination of highly-doped shallow source/drain extension and punchtrough stopper design without Vth increase results in good Ion-Ioff characteristies. In sub-0.1μm range, highly-doped extension causes more serious DIBL (drain induced barrier lowering). It will become a big challenge for device and doping technology to overcome this problem. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MIOSFET / doping-profile / extension / shallow junction / punchthrough stopper / DIBL |
| Paper # | ED99-74 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Limitation factors of drain current in 0.1-0.2 μm MOSFET's |
| Sub Title (in English) | |
| Keyword(1) | MIOSFET |
| Keyword(2) | doping-profile |
| Keyword(3) | extension |
| Keyword(4) | shallow junction |
| Keyword(5) | punchthrough stopper |
| Keyword(6) | DIBL |
| 1st Author's Name | Eiichi Murakami |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | Akio Nishida |
| 2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 3rd Author's Name | Shin'ichiro Kimura |
| 3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| Date | 1999/6/25 |
| Paper # | ED99-74 |
| Volume (vol) | vol.99 |
| Number (no) | 146 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |